Electronic special gases are an important branch of special gases and are indispensable raw materials in the production of integrated circuits, display panels and other electronic industries.
In the production process of the entire semiconductor industry, almost every link from chip production to the final device packaging is inseparable from electronic special gases, such as photolithography, etching, ion implantation, etc., and the types of gases used are many and the quality requirements are high, so electronic special gases are known as the “blood” of semiconductors.
Fullcryo gas company focuses on the research and development, production and sales of electronic special gases, and is a domestic manufacturer and supplier in the field of special gases.
The company’s product line covers high-purity electronic special gases, high-purity rare gases, industrial gases, etc. Fullcryo gas supplier has a professional core team and successful operating experience, and can supply high-purity electronic special gas products of the same quality as international leading factories; at the same time, it has reliable, safe and stable operating experience, high-quality gas supply chain resources, and can provide professional customized design solutions and high-quality engineering construction solutions to create greater value for customers.
Etching is a process that uses chemical and physical methods to selectively remove unwanted materials from the surface of silicon wafers. The purpose of etching is to correctly replicate the mask pattern on the silicon wafer coated with glue. Etching methods are divided into wet chemical etching and dry chemical etching.
Dry chemical etching uses ions or free radicals in the plasma generated by low-pressure discharge to react chemically with the material, and achieves the purpose of etching through physical effects such as bombardment.
Its main medium is gas. Silicon wafer etching gases are mainly fluorine-based gases, including CF4, SF6, C2F6, NF3, as well as chlorine-based (Cl2) and bromine-based (Br2, HBr) gases.
Common Etching Gases:
|
Material |
Etching Gases |
|
AI |
Silane (SiH4) + Argon, Carbon Tetrachloride (CCl4) + (Argon, Helium) |
|
Cr |
Carbon tetrachloride (CCl4) + oxygen, carbon tetrachloride (CCl4) + air |
|
Mo |
Carbon dichloride (CCl2F2) + oxygen, carbon tetrafluoride (CF4) + oxygen |
|
Pt |
Trichlorotrifluoroethane (C2Cl3F3) + oxygen, carbon tetrafluoride (CF4) + oxygen |
|
Si |
Carbon tetrafluoride (CF4) + oxygen |
|
W |
Carbon tetrafluoride (CF4) + oxygen |
Epitaxial deposition is to coat a thin film on the substrate wafer as a buffer layer to prevent harmful impurities from entering the silicon substrate. Common methods include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Chemical vapor deposition uses a large amount of electron gas.
Chemical vapor deposition is a process technology in which the reactants react chemically under gaseous conditions to generate solid substances that are deposited on the surface of a heated solid substrate, thereby obtaining solid materials.
In the semiconductor industry, the gas used to grow one or more layers of materials using the chemical vapor deposition method on a carefully selected substrate is called epitaxial gas. Common silicon epitaxial gases include SiH2Cl2, SiHCl3 and SiCl4.
Epitaxy mainly includes epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, amorphous silicon film deposition, etc. Epitaxy is a process in which a single crystal material is deposited and grown on the surface of a substrate. The composition of commonly used semiconductor epitaxial mixed gases is as follows:
|
Dilution gas |
|
|
Silane (SiH4) |
Helium, Argon, Hydrogen, Nitrogen |
|
Chlorosilane (SiCl4) |
Helium, Argon, Hydrogen, Nitrogen |
|
Dichlorosilane (SiH2Cl2) |
Helium, Argon, Hydrogen, Nitrogen |
|
Disilane(Si2H6) |
Helium, Argon, Hydrogen, Nitrogen |
Electronic specialty gases have important applications in many fields. First, in semiconductor manufacturing, they are used in cleaning and etching processes to ensure the accuracy and reliability of circuits.
Secondly, in the chemical industry, electronic specialty gases such as fluorinated gases are used in reaction and synthesis processes to improve product purity. In addition, these gases also play a key role in medicine and scientific research, for example, in gas chromatography and mass spectrometry analysis, providing high-purity gases to ensure accurate test results.
Overall, the application of electronic specialty gases has greatly promoted the development of modern science and technology.
Fullcryo gas company focuses on the research and development, production and sales of electronic specialty gases, and is a domestic manufacturer and supplier of special gases.
Fullcryo gas factory has a professional core team and successful operating experience, and is able to produce and supply high-quality high-purity electronic specialty gas products. It has reliable, safe and stable operating experience and high-quality gas supply chain resources, and can provide professional customized design solutions and high-quality engineering construction solutions to create greater value for customers.
|
Types |
Production |
Main gas products |
Effect |
|
Electronic specialty gas |
Silicon wafer manufacturing |
Nitrogen trifluoride, hydrogen chloride, hydrogen, argon |
Chlorination, reduction, dissolution, spin pulling, ambient air |
|
Oxidation |
Nitrogen trifluoride, chlorine, hydrogen chloride, trichloroethane, ethylene dichloride |
Cleaning and removing impurities |
|
|
Chemical Vapor Deposition (CVD) |
Ammonia, helium, nitrous oxide, TEOS, TEB, TEPO, phosphine, chlorine trifluoride, dichlorosilane, nitrogen fluoride, silane, tungsten hexafluoride, hexafluoroethane, titanium tetrachloride, methane, etc. |
Formation of CVD thin films |
|
|
Photolithography |
Nitrogen trifluoride, fluorine, helium, krypton, neon, etc. |
Photolithography |
|
|
Etching process |
Nitrogen trifluoride, silane, helium, carbon tetrafluoride, octafluorocyclobutane, octafluorocyclopentene, trifluoromethane, difluoromethane, chlorine, hydrogen bromide, boron trichloride, sulfur hexafluoride, carbon monoxide, etc. |
Etching, improving gases, increasing anisotropy and selectivity |
|
|
Ion implantation |
Arsenic fluoride, phosphorus trifluoride, phosphine, boron trifluoride, boron trichloride, silicon tetrafluoride, sulfur hexafluoride, xenon, etc. |
Formation of P-type and N-type |
|
|
Doping |
Nitrogen trifluoride, gases containing Group III and Group V atoms such as boron, phosphorus, and arsenic, such as boron trichloride, diborane, boron trifluoride |
Doping of semiconductors |
|
|
Electronic Bulk Gases |
Environmental gas protective gas |
Nitrogen, oxygen, argon, carbon dioxide, etc. |
Provide an inert environment |